Magnetic resistance memory apparatus having multi levels and method of driving the same

摘要

A magnetic resistance memory apparatus capable of implementing various levels and a method of driving the same are provided. The magnetic resistance memory apparatus includes a first magnetic device that includes a fixed layer having a fixed magnetization direction, a tunnel layer disposed on the fixed layer, and a first free layer disposed on the tunnel layer having a variable magnetization direction, and a second magnetic device disposed on the first magnetic device including a plurality of free layers insulated with a spacer layer interposed.

主权项

1. A method of driving a magnetic resistance memory apparatus comprising:
setting first through third free layers to have a second magnetization direction so that the magnetic memory apparatus has a first resistance level; changing the magnetization direction of a third free layer to the first magnetization direction by applying a first magnetic field so that the magnetic memory apparatus has a second resistance level; changing the magnetization direction of a second free layer to the first magnetization direction by applying a second magnetic field so that the magnetic memory apparatus has a third resistance level; and changing the magnetization direction of a first free layer to the first magnetization direction by applying a third magnetic field to have a fourth resistance level.