Manufacturing method of single crystal semiconductor film and manufacturing method of electrode

摘要

To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapor phase epitaxial growth method, a film having tensile stress (for example, a thermo-setting resin film 12) is formed over a surface of the single crystal semiconductor film 11, and the single crystal semiconductor substrate 10 and the single crystal semiconductor film 11 are separated from each other by a separation step in which force is applied to the single crystal semiconductor film 11, thereby obtaining a single crystal semiconductor film. Note that as the thermo-setting resin film 12, an epoxy resin film can be used, for example.

主权项

1. A manufacturing method of a single crystal semiconductor film comprising the steps of:
forming a single crystal semiconductor film having compression stress over a surface of a single crystal semiconductor substrate by a vapor phase epitaxial growth method; forming a first film having tensile stress and electrical conductivity over a surface of the single crystal semiconductor film; sticking a second film over a surface of the first film having tensile stress; and separating the single crystal semiconductor substrate and the single crystal semiconductor film from each other by a separation step in which force is applied to the single crystal semiconductor film, wherein a groove is formed in the first film and the second film before the separation step.