Silicon layer for stopping dislocation propagation

摘要

A composite semiconductor structure and method of forming the same are provided. The composite semiconductor structure includes a first silicon-containing compound layer comprising an element selected from the group consisting essentially of germanium and carbon; a silicon layer on the first silicon-containing compound layer, wherein the silicon layer comprises substantially pure silicon; and a second silicon-containing compound layer comprising the element on the silicon layer. The first and the second silicon-containing compound layers have substantially lower silicon concentrations than the silicon layer. The composite semiconductor structure may be formed as source/drain regions of metal-oxide-semiconductor (MOS) devices.

主权项

1. A method comprising:
forming a first silicon-containing compound layer, wherein the first silicon-containing compound layer comprises an element selected from the group consisting essentially of germanium and carbon; forming a silicon layer over the first silicon-containing compound layer, wherein the silicon layer comprises substantially pure silicon; forming a second silicon-containing compound layer comprising the element over the silicon layer, wherein the first and the second silicon-containing compound layers have lower silicon concentrations than the silicon layer; and implanting an impurity into the second silicon-containing compound layer, wherein an end-of-range of the implanting is higher than a bottom surface of the silicon layer.