Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur, in particular flat substrates

摘要

The invention relates to a method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur, in particular flat substrates, containing at least one conducting, semiconducting and/or insulating layer, in which a substrate which is provided with at least one metal layer and/or with at least one layer containing metal, in particular a stack of substrates, each of which is provided with at least one metal layer and/or with at least one layer which contains metal, is inserted into a processing chamber and heated to a predetermined substrate temperature; elementary selenium and/or sulphur vapor is guided past on the or on every metal layer and/or layer containing metal, from a source located inside and/or outside the processing chamber, in particular by means of a carrier gas which is in particular inert, under rough vacuum conditions or ambient pressure conditions or overpressure conditions, in order to react chemically with said layer with selenium or sulphur in a targeted manner; the substrate is heated by means of forced convection by at least one gas conveying device and/or the elementary selenium and/or sulphur vapor is mixed and guided past on the substrate by means of forced convection by at least one gas conveying device in the processing chamber, in particular in a homogeneous manner. The invention furthermore relates to a processing device for implementing a method of this type.

主权项

1. A method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur, in which the substrates contain at least one conducting, semiconducting, and/or insulating layer, the method comprising:
inserting a stack of substrates, each of which has at least one metal layer or at least one layer containing metal, into a processing chamber, wherein an inner side of the processing chamber has a thermal insulation material that is resistant under processing conditions; heating the stack of substrates to a predetermined substrate temperature; and guiding elementary selenium and/or sulphur vapor past the metal layers or layers containing metal in the stack of substrates, from a source located inside or outside the processing chamber by way of a carrier gas, under rough vacuum conditions or ambient pressure conditions or overpressure conditions, in order to react chemically with said layers with selenium or sulphur in a controlled manner, wherein the stack of substrates is heated by way of forced convection by at least one gas conveying device in the processing chamber in which the elementary selenium and/or sulphur vapor is mixed and guided past the substrate by way of the forced convection in a homogeneous manner, and wherein a heating device is arranged in a gas flow circuit generated by the gas conveying device in order to heat the carrier gas containing the elementary selenium and/or sulphur vapor in the processing chamber.