Electron beam lithography system and method for improving throughput

摘要

An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer.

主权项

1. A method comprising:
receiving a pattern layout having at least one feature; determining a size of the at least one feature is greater than a predetermined value; converting the at least one feature into a biased feature that has a plurality of sub-features having space interposing each of the plurality of sub-features; and writing an energy sensitive material layer according to the biased feature, thereby forming the at least one feature in the energy sensitive material layer.