发明名称 |
Magnetic device and method of manufacturing the same |
摘要 |
A method of manufacturing a magnetic device includes forming a stack structure, the stack structure including a magnetic layer, and etching the stack structure by using an etching gas, the etching gas including at least 80% by volume of H2 gas. |
申请公布号 |
US8847342(B2) |
申请公布日期 |
2014.09.30 |
申请号 |
US201213600422 |
申请日期 |
2012.08.31 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Lee Woo-cheol;Ken Tokashiki;Kwon Hyung-joon;Jung Myung-hoon |
分类号 |
H01L27/22 |
主分类号 |
H01L27/22 |
代理机构 |
Lee & Morse, P.C. |
代理人 |
Lee & Morse, P.C. |
主权项 |
1. A magnetic device, comprising:
at least one magnetic resistive device on a substrate, the magnetic resistive device having sidewalls with a substantially vertical profile and layers stacked in a vertical direction, wherein a height of the at least one magnetic resistive device is at least 1.5 times a width of the at least one magnetic resistive device. |
地址 |
Suwon-si, Gyeonggi-do KR |