发明名称 Magnetic device and method of manufacturing the same
摘要 A method of manufacturing a magnetic device includes forming a stack structure, the stack structure including a magnetic layer, and etching the stack structure by using an etching gas, the etching gas including at least 80% by volume of H2 gas.
申请公布号 US8847342(B2) 申请公布日期 2014.09.30
申请号 US201213600422 申请日期 2012.08.31
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Woo-cheol;Ken Tokashiki;Kwon Hyung-joon;Jung Myung-hoon
分类号 H01L27/22 主分类号 H01L27/22
代理机构 Lee & Morse, P.C. 代理人 Lee & Morse, P.C.
主权项 1. A magnetic device, comprising: at least one magnetic resistive device on a substrate, the magnetic resistive device having sidewalls with a substantially vertical profile and layers stacked in a vertical direction, wherein a height of the at least one magnetic resistive device is at least 1.5 times a width of the at least one magnetic resistive device.
地址 Suwon-si, Gyeonggi-do KR