Memory component including an ion source layer and a resistance change layer, and a memory device using the same

摘要

A memory component having a first electrode; a second electrode; and a memory layer between the first and second electrodes. The memory layer includes (a) on a first electrode side thereof, a high resistance layer that is composed of a plurality of layers, at least one of the plurality of layers including tellurium (Te) as the chief component among anion components, and (b) on a second electrode side thereof, an ion source layer with at least one kind of metal element and at least one kind of chalcogen element selected from the group consisting of tellurium (Te), sulfur (S) and selenium (Se). The memory component is configured to change a resistance of the high resistance layer in accordance with a voltage or current pulse stress applied between the first and second electrodes.

主权项

1. A memory component comprising:
a first electrode; a second electrode; and a memory layer between the first and second electrodes, wherein:
the memory layer includes (a) on a first electrode side thereof, a high resistance layer that is composed of a plurality of layers, at least one of the plurality of layers including tellurium (Te) as the chief component among anion components, and (b) on a second electrode side thereof, an ion source layer with at least one kind of metal element and at least one kind of chalcogen element selected from the group consisting of tellurium (Te), sulfur (S) and selenium (Se),the memory component is configured to change a resistance of the high resistance layer in accordance with a voltage or current applied between the first and second electrodes, anda first one of the plurality of layers of the high resistance layer has an Al—Te compound as a main component, and a second one of the plurality of layers of the high resistance layer has oxygen (O) or nitrogen (N) as a main component.