发明名称 Method for slicing a multiplicity of wafers from a crystal composed of semiconductor material
摘要 A method for slicing a plurality of wafers from a crystal includes providing a crystal of semiconductor material having a longitudinal axis, a cross section and at least one pulling edge. The crystal is fixed on a table and guided through a wire gang defined by sawing wire so as to form the wafers. The guiding is provided by a relative movement between the table and the wire gang such that entry sawing or exit sawing using the sawing wire occurs in a vicinity of the at least one pulling edge of the crystal.
申请公布号 US8844511(B2) 申请公布日期 2014.09.30
申请号 US201113009957 申请日期 2011.01.20
申请人 Siltronic AG 发明人 Kaeser Maximilian;Blank Albert
分类号 B28D1/06;B28D5/04 主分类号 B28D1/06
代理机构 Leydig, Voit & Mayer, Ltd. 代理人 Leydig, Voit & Mayer, Ltd.
主权项 1. A method for slicing a plurality of wafers from a crystal comprising: providing a crystal of semiconductor material having a longitudinal axis, a cross section and at least one pulling edge; fixing the crystal on a table; guiding the crystal through a wire gang defined by sawing wire so as to form the wafers, the guiding provided by a relative movement between the table and the wire gang such that the wire gang initiates or completes cutting of crystal in a vicinity of a selected pulling edge of the crystal.
地址 Munich DE