发明名称 |
Method for slicing a multiplicity of wafers from a crystal composed of semiconductor material |
摘要 |
A method for slicing a plurality of wafers from a crystal includes providing a crystal of semiconductor material having a longitudinal axis, a cross section and at least one pulling edge. The crystal is fixed on a table and guided through a wire gang defined by sawing wire so as to form the wafers. The guiding is provided by a relative movement between the table and the wire gang such that entry sawing or exit sawing using the sawing wire occurs in a vicinity of the at least one pulling edge of the crystal. |
申请公布号 |
US8844511(B2) |
申请公布日期 |
2014.09.30 |
申请号 |
US201113009957 |
申请日期 |
2011.01.20 |
申请人 |
Siltronic AG |
发明人 |
Kaeser Maximilian;Blank Albert |
分类号 |
B28D1/06;B28D5/04 |
主分类号 |
B28D1/06 |
代理机构 |
Leydig, Voit & Mayer, Ltd. |
代理人 |
Leydig, Voit & Mayer, Ltd. |
主权项 |
1. A method for slicing a plurality of wafers from a crystal comprising:
providing a crystal of semiconductor material having a longitudinal axis, a cross section and at least one pulling edge; fixing the crystal on a table; guiding the crystal through a wire gang defined by sawing wire so as to form the wafers, the guiding provided by a relative movement between the table and the wire gang such that the wire gang initiates or completes cutting of crystal in a vicinity of a selected pulling edge of the crystal. |
地址 |
Munich DE |