发明名称 |
Method for removing oxides |
摘要 |
A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate. |
申请公布号 |
US8846163(B2) |
申请公布日期 |
2014.09.30 |
申请号 |
US201213489137 |
申请日期 |
2012.06.05 |
申请人 |
Applied Materials, Inc. |
发明人 |
Kao Chien-Teh;Chou Jing-Pei (Connie);Lai Chiukin (Steven);Umotoy Sal;Huston Joel M.;Trinh Son;Chang Mei;Yuan Xiaoxiong (John);Chang Yu;Lu Xinliang;Wang Wei W.;Phan See-Eng |
分类号 |
B05D3/06;H05B3/00;C23C16/00;H01J37/32;H01L21/67;H01L21/02 |
主分类号 |
B05D3/06 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A deposition method comprising:
positioning a substrate having a native oxide layer on a substrate support plate in a processing chamber; providing a gas mixture to the processing chamber using a resistively heated showerhead comprising a heating element that is a resistive heater; thermally activating the gas mixture; exposing the native oxide layer on the substrate to the activated gas mixture within the processing chamber while maintaining the substrate at a temperature below 65° C. to form a volatile film on the substrate; and heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the native oxide layer by heat generated by the heating element and radiated from the resistively heated showerhead. |
地址 |
Santa Clara CA US |