发明名称 Method for removing oxides
摘要 A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
申请公布号 US8846163(B2) 申请公布日期 2014.09.30
申请号 US201213489137 申请日期 2012.06.05
申请人 Applied Materials, Inc. 发明人 Kao Chien-Teh;Chou Jing-Pei (Connie);Lai Chiukin (Steven);Umotoy Sal;Huston Joel M.;Trinh Son;Chang Mei;Yuan Xiaoxiong (John);Chang Yu;Lu Xinliang;Wang Wei W.;Phan See-Eng
分类号 B05D3/06;H05B3/00;C23C16/00;H01J37/32;H01L21/67;H01L21/02 主分类号 B05D3/06
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A deposition method comprising: positioning a substrate having a native oxide layer on a substrate support plate in a processing chamber; providing a gas mixture to the processing chamber using a resistively heated showerhead comprising a heating element that is a resistive heater; thermally activating the gas mixture; exposing the native oxide layer on the substrate to the activated gas mixture within the processing chamber while maintaining the substrate at a temperature below 65° C. to form a volatile film on the substrate; and heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the native oxide layer by heat generated by the heating element and radiated from the resistively heated showerhead.
地址 Santa Clara CA US