发明名称 |
Multi-bit-per-cell flash memory device with non-bijective mapping |
摘要 |
To store input data in a plurality of memory cells, a mapping function of bit sequences to physical parameter states of the cells is provided. The cells are programmed, in accordance with the mapping function, to store the input data, in a way that would store uniformly distributed data with a programming state distribution other than any native state distribution of the mapping function. To store input data in a single memory cell, a mapping function of bit sequences to states of a physical parameter of the cell, such that if uniformly distributed data were stored in a plurality of such memory cells then the states of the physical parameter of the cells would be distributed non-uniformly, is provided. The memory cell is programmed to store the input data in accordance with the mapping function. |
申请公布号 |
US8848442(B2) |
申请公布日期 |
2014.09.30 |
申请号 |
US201012977097 |
申请日期 |
2010.12.23 |
申请人 |
Sandisk IL Ltd. |
发明人 |
Sharon Eran;Alrod Idan |
分类号 |
G11C16/04;G11C16/10;G11C16/06;G11C16/34;G06F11/10;G11C7/10;G11C29/24;G11C11/56 |
主分类号 |
G11C16/04 |
代理机构 |
Alston & Bird LLP |
代理人 |
Alston & Bird LLP |
主权项 |
1. A method of storing input data in a plurality of memory cells, comprising:
(a) providing a mapping function of bit sequences to states of a physical parameter of the cells; (b) programming the plurality of memory cells, in accordance with the mapping function, to store the input data, in a way that stores uniformly distributed data with a programming state distribution other than any native state distribution of the mapping function; and (c) determining the programming state distribution by at least selecting a target state distribution, and devising a transformation so that the programming state distribution approximates the target state distribution within a predetermined tolerance. |
地址 |
Kfar Saba IL |