发明名称 Multi-bit-per-cell flash memory device with non-bijective mapping
摘要 To store input data in a plurality of memory cells, a mapping function of bit sequences to physical parameter states of the cells is provided. The cells are programmed, in accordance with the mapping function, to store the input data, in a way that would store uniformly distributed data with a programming state distribution other than any native state distribution of the mapping function. To store input data in a single memory cell, a mapping function of bit sequences to states of a physical parameter of the cell, such that if uniformly distributed data were stored in a plurality of such memory cells then the states of the physical parameter of the cells would be distributed non-uniformly, is provided. The memory cell is programmed to store the input data in accordance with the mapping function.
申请公布号 US8848442(B2) 申请公布日期 2014.09.30
申请号 US201012977097 申请日期 2010.12.23
申请人 Sandisk IL Ltd. 发明人 Sharon Eran;Alrod Idan
分类号 G11C16/04;G11C16/10;G11C16/06;G11C16/34;G06F11/10;G11C7/10;G11C29/24;G11C11/56 主分类号 G11C16/04
代理机构 Alston & Bird LLP 代理人 Alston & Bird LLP
主权项 1. A method of storing input data in a plurality of memory cells, comprising: (a) providing a mapping function of bit sequences to states of a physical parameter of the cells; (b) programming the plurality of memory cells, in accordance with the mapping function, to store the input data, in a way that stores uniformly distributed data with a programming state distribution other than any native state distribution of the mapping function; and (c) determining the programming state distribution by at least selecting a target state distribution, and devising a transformation so that the programming state distribution approximates the target state distribution within a predetermined tolerance.
地址 Kfar Saba IL