发明名称 |
RF switch circuit including a series connection of a plurality of transistors, RF switch including an RF switch circuit and method for switching RF signals |
摘要 |
An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors. |
申请公布号 |
US8847667(B2) |
申请公布日期 |
2014.09.30 |
申请号 |
US201314082919 |
申请日期 |
2013.11.18 |
申请人 |
Infineon Technologies AG |
发明人 |
Taddiken Hans;Boettner Thomas |
分类号 |
H03K17/687 |
主分类号 |
H03K17/687 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. An RF switch circuit for switching RF signals, the RF switch circuit comprising:
a first terminal and a second terminal; a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit, wherein a first terminal of the RF switch circuit is connected to a first terminal of a first transistor in a series of the series connection of the plurality of transistors and a second terminal of the RF switch circuit is connected to a second terminal of a last transistor in the series of the series connection of the plurality of transistors; a first switch directly connected between the first terminal of the first transistor and a control terminal of the first transistor; a second switch directly connected between the second terminal of the second transistor and a control terminal of the second transistor; and a control circuit configured to close the first switch and the second switch when the RF switch circuit is an a high impedance state, and open the first switch and the second switch when the RF switch circuit is in a low impedance state. |
地址 |
Neubiberg DE |