RF switch with RF pathway charge-discharge circuit and associated method

摘要

A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.

主权项

1. A radio frequency switch, comprising:
a common port; a first port; a second port; a first semiconductor switching element disposed in a first RF pathway between the common port and the first port; a second semiconductor switching element disposed in a second RF pathway between the common port and the second port; a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway; a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway; and a charge-discharge (CDC) circuit in electrical communication with at least one node, of one of the DC blocking capacitors, that is located between the one of the DC blocking capacitors and one of the first semiconductor switching element or the second semiconductor switching element and configured to charge or discharge, via a low resistance path, the one of the DC blocking capacitors with direct current dependent on whether the first or the second RF pathway in which the at least one of the DC blocking capacitors is disposed is enabled.