Three dimensional non-volatile storage with multi block row selection

摘要

A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

主权项

1. A non-volatile storage system, comprising:
a substrate; a monolithic three dimensional memory array of memory elements positioned above and not in the substrate, the memory elements are arranged in blocks; a plurality of word lines connected to the memory elements, the word lines are arranged as groups of connected word lines; a plurality of global word lines, each global word line is connected to one of the groups in a block; word line drivers in the substrate, below the memory elements and in communication with the groups; a plurality of bit line drivers in the substrate; a plurality of global bit lines connected to the bit line drivers; a plurality of vertically oriented bit lines above and not in the substrate; a plurality of select devices connected to the vertically oriented bit lines and the global bit lines, each block of memory elements is connected to a different subset of the select devices; a plurality of row select lines, each row select line connects to a subset of the select devices for multiple blocks; and row select line drivers in the substrate, each row select line driver drives a row select line.