Integrated power amplifier with load inductor located under IC die

摘要

A compact integrated power amplifier is described herein. In an exemplary design, an apparatus includes (i) an integrated circuit (IC) die having at least one transistor for a power amplifier and (ii) an IC package having a load inductor for the power amplifier. The IC die is mounted on the IC package with the transistor(s) located over the load inductor. In an exemplary design, the IC die includes a transistor manifold that is placed over the load inductor on the IC package. The transistor(s) are fabricated in the transistor manifold, have a drain connection in the center of the transistor manifold, and have source connections on two sides of the transistor manifold. The IC die and the IC package may include one or more additional power amplifiers. The transistor(s) for each power amplifier may be located over the load inductor for that power amplifier.

主权项

1. An apparatus comprising:
an integrated circuit (IC) die comprising a transistor manifold having at least one transistor for a power amplifier and including a first source connection on a first side of the transistor manifold and a second source connection on a second, opposite side of the transistor manifold; and an IC package comprising a load inductor for the power amplifier coupled between the power amplifier and a supply voltage, the IC die is mounted on the IC package with the at least one transistor located over and electrically coupled to the load inductor.