Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same

摘要

Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in the first layer, forming metal regions on sidewalls of the trenches, and forming a region of dielectric or polymer material over or in the substrate. Moreover, an exemplary method may also include forming areas of metal regions on the sidewalls of the trenches such that planar strip portions of the areas form electrically conductive regions of the passive element(s) that are aligned substantially perpendicularly with respect to a primary plane of the substrate. Other exemplary embodiments may comprise various articles or methods including capacitive and/or inductive aspects, Titanium- and/or Tantalum-based resistive aspects, products, products by processes, packages and composites consistent with one or more aspects of the innovations set forth herein.

主权项

1. A method for manufacturing a semiconductor article, the method comprising:
forming a first layer of dielectric/polymer material on a substrate; etching trenches within regions defining a passive element in the first layer; forming a metal layer on sidewalls of the trenches; forming a region of dielectric or polymer material over the substrate; forming areas of the metal layer formed on the sidewalls of the trenches such that planar strip portions of the areas form electrically conductive regions of the passive element that are aligned substantially perpendicularly with respect to a primary plane of the substrate; and defining the regions dedicated for the passive element, wherein the defining includes:
performing a first mask process including formation of a first mask material on the first dielectric/polymer layer;etching regions of the first dielectric/polymer layer not protected by the first mask material to define regions for formation of the passive element;stripping the first masking material.