Room temperature metal direct bonding

摘要

A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

主权项

1. A method of bonding substrates, comprising:
directly contacting a first non-metallic region proximate to a first plurality of metallic pads disposed on a first substrate with a second non-metallic region proximate to a plurality of metallic structures disposed on a second substrate; after directly contacting the first and second non-metallic regions, bonding the first non-metallic region to the second non-metallic region without applying external pressure; forming a contact between a first pad of the first plurality of metallic pads with a first structure of the plurality of metallic structures and generating pressure between the first pad and the first structure during said bonding the first non-metallic region to the second non-metallic region; and heating the first and second substrates in a range of about 100-250° C.