| 主权项 |
1. A semiconductor device manufacturing method comprising:
a first step of, after preparing a semiconductor substrate including a first region where a plurality of photoelectric conversion portions is disposed and a second region where a circuit for processing signals is disposed, forming a first conductive member on the second region; a second step of forming a first insulator which includes a first part disposed on the first region and a second part disposed on the second region, wherein the first insulator is formed on the first conductive member; a third step of forming a first opening in the first part of the first insulator, while the first insulator is left at a position where a plug connected to the first conductive member is to be disposed; a fourth step of forming a second insulator, which is made of a material different from a material of the first insulator, inside the first opening and on the second part of the first insulator; a fifth step of removing first and second parts of the second insulator such that the first insulator is exposed, both of the first and second parts of the second insulator being disposed on the second region, the first part of the second insulator being disposed correspondingly to a position where the plug is to be disposed, and the second part of the second insulator being disposed within a predetermined distance from the first part of the second insulator; a sixth step of, after the fifth step, forming a second opening in the first insulator at the position where the plug is to be disposed; and a seventh step of forming the plug in the second opening, wherein an area of the second opening is smaller than an area of the first and second parts of the second insulator, which are removed in the fifth step, and the method further comprises, between the fourth and fifth steps, a step of flattening the second insulator. |
