发明名称 |
Array substrate for reflective type or transflective type liquid crystal display device |
摘要 |
An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line on the substrate and crossing each other to define a pixel region, a thin film transistor connected to the gate line and the data line, a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface, an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface, and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure. |
申请公布号 |
US8845343(B2) |
申请公布日期 |
2014.09.30 |
申请号 |
US201414261980 |
申请日期 |
2014.04.25 |
申请人 |
LG Display Co., Ltd. |
发明人 |
Lee Jae-Kyun;Oh Jae-Young |
分类号 |
G02F1/1335;H01L27/12 |
主分类号 |
G02F1/1335 |
代理机构 |
McKenna Long & Aldrdige LLP |
代理人 |
McKenna Long & Aldrdige LLP |
主权项 |
1. An array substrate for a liquid crystal display device, comprising:
a substrate; a gate line and a data line on the substrate and crossing each other to define a pixel region; a thin film transistor connected to the gate line and the data line; a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface; an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface; and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure, wherein the first passivation layer and the auxiliary unevenness layer have a contact hole exposing an electrode of the thin film transistor, and the reflector is directly connected to the electrode through the contact hole. |
地址 |
Seoul KR |