METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To form a thin film having high resistance and a low dielectric constant to HF in a low temperature region.SOLUTION: A method for manufacturing a semiconductor device includes a step of forming thin film having a borazine ring skeleton and containing a prescribed element, boron, carbon, and nitrogen on a substrate by performing a cycle including a step of supplying a first material gas containing a prescribed element and a halogen group to the substrate, a step of supplying a second material gas containing the prescribed element and an amino group to the substrate, a step of supplying a reaction gas containing an organic borazine compound to the substrate, and a step of supplying a carbon-containing gas to the substrate a prescribed number of times under the condition that the borazine ring skeleton in the organic borazine compound is held.