| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitter capable of highly efficiently emitting light since electrons can be efficiently injected into a luminous layer formed of a group IV element.SOLUTION: This light emitter has a carrier trapping layer provided on a substrate and formed by a monocrystal containing the group IV element, the luminous layer provided on the substrate so as to be held between the carrier trapping layers, a first electrode connected to one end of the carrier trapping layer while having a first conductive type, and a second electrode connected to the other end of the carrier trapping layer while having a second conductive type that is a conduction type different from the first conductive type. The luminous layer is formed by a germanium monocrystalline layer in the upper part of which a dielectric layer having property for applying tensile strain is provided and to which the tensile strain is applied, and the crystalline lattice interval of the luminous layer in a direction parallel with the principle plane of the luminous layer is larger than the crystalline lattice interval of the carrier trapping layer. |
