| 摘要 |
PROBLEM TO BE SOLVED: To suppress a decrease in light-emitting efficiency when applying high current to a semiconductor light-emitting element in which an optical semiconductor laminate composed of a nitride semiconductor grows on a growth substrate whose surface is composed of GaN.SOLUTION: A semiconductor light-emitting element is manufactured by performing the following steps of: a) preparing a growth substrate at least whose surface is composed of gallium nitride; b) heating the growth substrate to a crystal growth temperature while supplying an ammonia gas to the surface of the growth substrate, the supply of the ammonia gas to the growth substrate being started during the period from when the growth substrate is started to be heated to when the growth substrate reaches the crystal growth temperature; and c) growing an optical semiconductor laminate having a light-emitting property and including a nitride semiconductor layer composed of AlInGaN on the surface of the growth substrate heated to the crystal growth temperature. |
