| 摘要 |
<p>The objective of the present invention is to provide a technology of reducing the maintenance time of an ion implanting device. The ion implanting device uses fluoride compound gas as source gas. The device comprises: a vacuum container into which source gas is introduced; an introducing route which is installed in the vacuum container to react with a fluoride compound deposited inside the vacuum container and receives cleaning gas containing a component to generate reaction product gas; a feeding device which forcibly feeds the cleaning gas to the introducing route; a first adjusting device which adjusts a gas flow rate of the introducing route; an exhausting route which is installed in the vacuum container to exhaust the reaction product gas along with the cleaning gas; a second adjusting device which adjusts a gas flow rate of the exhausting route; and a control device which controls adjustment of the gas rates by the first and second adjusting devices according to an operation of the feeding device.</p> |
