| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved method for grinding at least one semiconductor material wafer including an edge-notch polishing (ENP).SOLUTION: A method for grinding at least one semiconductor material wafer, comprises the steps of: performing first both-surfaces grinding at the same time of a front surface and a rear surface of the at least one semiconductor material wafer by using a hard grinding pad; performing an edge-notch polishing; performing second both-surfaces grinding at the same time of the front surface and the rear surface of the at least one semiconductor material wafer by using a softer grinding pad; and performing final one surface mirror grinding of the front surface in this order. |
