发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus or plasma processing method, which is able to achieve high temperature response and a wide temperature settable range.SOLUTION: A plasma processing apparatus comprises: a sample table arranged in a processing chamber in a vacuum container and used for placing a sample thereon; a refrigeration cycle arranged within the sample table, functioning as an evaporator in which a coolant circulates, including a coolant passage, a compressor, and a condenser connected in this order, and causing the coolant to circulate in this order; first and second expansion valves arranged between the condenser and the coolant passage and between the coolant passage and the compressor, on the refrigeration cycle; and a vaporizer arranged between the second expansion valve and the compressor on the refrigeration cycle and configured to vaporize the coolant by heating it. Based on the adjustment of opening/closing of the first and second expansion valves and the temperature of the coolant between the condenser and the second expansion valve, an amount of heat exchange of the coolant in the condenser or vaporizer is adjusted.
申请公布号 JP2014183137(A) 申请公布日期 2014.09.29
申请号 JP20130055872 申请日期 2013.03.19
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 TANDO TAKUMI;MIYA TAKESHI;IZAWA MASARU;KAWASAKI HIROMICHI
分类号 H01L21/3065;H01L21/683 主分类号 H01L21/3065
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