发明名称 METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
摘要 The objective of the present invention is to form a thin film with low permittivity and tolerance to HF, in a low temperature region. The present invention has borazine ring frame and includes a process of forming a thin film which includes preset element, boron, carbon, and nitrogen, by performing preset times, under a condition which maintains the borazine ring frame in an organic borazine composite, a cycle which includes a process of supplying a first raw material gas including preset element and the halogen radical to a substrate, a step of supplying a second raw material gas including preset element and amino radical to the substrate, a process of supplying a reaction gas including the organic borazine composite to the substrate, and a step of supplying a carbon-containing gas to the substrate.
申请公布号 KR20140114756(A) 申请公布日期 2014.09.29
申请号 KR20140023525 申请日期 2014.02.27
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 HIROSE YOSHIRO;YAMAMOTO RYUJI;SANO ATSUSHI
分类号 H01L21/205 主分类号 H01L21/205
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