| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be easily manufactured, perform normally-off operation, and has high uniformity.SOLUTION: A semiconductor device comprises: a first semiconductor layer 12 formed on a substrate 11; a second semiconductor layer 13 formed on the first semiconductor layer 12; a first insulating layer 31 formed on the second semiconductor layer 13; a second insulating layer 32 formed on the first insulating layer 31; and a gate electrode 41 formed on the second insulating layer 32. The first insulating film 31 is made from a material containing SiO, and the second insulating layer 32 is made from a material containing one or two or more selected from AlO, ZrO, TaO, GaO, and HfO. |
