| 摘要 |
PROBLEM TO BE SOLVED: To increase the number of semiconductor elements per one wafer.SOLUTION: A pattern formation method on a wafer comprises: exposing a plurality of semiconductor chip patterns on a wafer by using a mask on which a semiconductor chip pattern and an exposure accuracy measurement pattern are formed and a reduction projection aligner and exposing the exposure accuracy measurement pattern only on a region of the wafer, outside a region of the wafer, where the semiconductor chip patterns are exposed; forming a first layer including the plurality of semiconductor chip patterns and the exposure accuracy measurement pattern by performing processing based on the exposed patterns in the exposure process; and similarly performing exposure by using the mask and the reduction projection aligner and forming a second layer based on the exposed pattern in the exposure process. |
