发明名称 ION SOURCE AND MAGNETIC FIELD GENERATION METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide an improved ion source capable of creating a relatively uniform ion beam profile.SOLUTION: A ion source comprises an ionization chamber 102 and two magnetic field sources 502. The ionization chamber 102 has a longitudinal axis extending through the chamber and includes two opposing chamber walls 504, and the chamber walls 504 are parallel to the longitudinal axis. Each of the two magnetic field sources 502 includes (i) a core and (ii) a coil substantially wound around the core. The magnetic field sources 502 are disposed along an outer surface of each of the opposing chamber walls 504 and proximately to each other, and directed substantially in parallel with the longitudinal axis. The cores of the magnetic field sources 502 are physically separated and electrically insulated from each other.</p>
申请公布号 JP2014183041(A) 申请公布日期 2014.09.29
申请号 JP20130231709 申请日期 2013.11.08
申请人 NISSIN ION EQUIPMENT CO LTD 发明人 SAMI K HAHTO;HAMAMOTO NARIAKI
分类号 H01J27/14;H01J37/08 主分类号 H01J27/14
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