METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To attain desired flatness while suppressing scratches and cracks in a planarization process.SOLUTION: A method of manufacturing a semiconductor device comprises: a step of forming a film 13 to be processed, which includes asperities on a surface, via layers 14, 15 having a dielectric constant smaller than that of the SiOon a semiconductor substrate 10; a step of planarizing the surface of the film to be processed; and a step of etching the surface of the planarized film to be processed.