| 摘要 |
<p>PROBLEM TO BE SOLVED: To repair data that is read from a defective memory element while suppressing an increase in circuit area.SOLUTION: A nonvolatile semiconductor memory device includes: a fuse circuit that includes a plurality of write-once elements and has part of the plurality of elements storing first information which indicates either the location of a defective element or the location of at least one element of the part of the elements; a storage circuit that stores the first information which is read from the part of the elements; and a repair circuit that repairs data which is read from an element at the location indicated by the first information stored in the storage circuit, out of data which is read from the plurality of elements.</p> |
