发明名称 DISPLAY DEVICE, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
摘要 <p>A display device according to an embodiment of the present invention includes a substrate part, a thin film transistor, a pixel electrode, and a display layer. The substrate part includes a substrate, a first insulation layer installed on the substrate, and a second insulation layer which is installed on the first insulation layer. The thin film transistor is installed on the substrate part and includes a gate electrode which is formed on the second insulation layer, a semiconductor layer of an oxide material which is separated from the gate electrode, a gate insulation layer which is installed between the gate electrode and the semiconductor layer, a first conductive part, a second conductive part, and a third insulation layer. The pixel electrode is connected to one among the first conductive part and the second conductive part. The display layer changes an emission or optical property according to charges supplied to the pixel electrode.</p>
申请公布号 KR20140114755(A) 申请公布日期 2014.09.29
申请号 KR20140023426 申请日期 2014.02.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKANO SHINTARO;UEDA TOMOMASA;MIURA KENTARO;SAITO NOBUYOSHI;SAKANO TATSUNORI;MAEDA YUYA;YAMAGUCHI HAJIME
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
代理机构 代理人
主权项
地址