| 摘要 |
Carbon concentration in a thin film is increased or controlled with high precision. A method of manufacturing a semiconductor device according to the present invention includes a process of forming a thin film containing silicon, oxygen, and carbon on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes the processes of supplying a precursor gas containing silicon, carbon, and a halogen element and having a Si-C bonding, and a first catalytic gas to the substrate and supplying an oxidizing gas and a second catalytic gas to the substrate. |
