CLEANING METHOD AND CLEANING DEVICE OF GROUP III NITRIDE SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a cleaning method and a cleaning device of a group III nitride semiconductor manufacturing apparatus which ensures a long life of a filter.SOLUTION: A cleaning method of a group III nitride semiconductor manufacturing apparatus comprises: a process of supplying at least a chlorine-based cleaning gas to inside a cleaning room; a process of converting at least a part of the group III nitride semiconductor to GaClto remove the part of the group III nitride semiconductor coating from a component which is a cleaning object inside the cleaning room and discharging an exhaust gas containing GaClfrom the cleaning room; and a process of capturing GaClfrom the exhaust gas containing GaClby a first filter and a second filter lying downstream of the first filter in a gas flow. A filter having an aperture within a range of not less than 300 μm and not more than 500 μm is used as the first filter. A filter having an aperture within a range of not less than 2 μm and not more than 100 μm is used as the second filter.