| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting element which inhibits strain of a semiconductor structure layer, especially strain of an active layer and has high luminous efficiency and high reliability.SOLUTION: A light-emitting element 10 composed of a GaN-based semiconductor comprises a structure in which an n-type semiconductor layer 13, a superlattice structure layer 14 including at least one InGaN superlattice layer, an active layer 15, an AlGaN-based semiconductor layer 16 and a p-type semiconductor layer 17 are sequentially laminated, in which an uneven structure 16A is formed at an interface between the AlGaN-based semiconductor layer 16 and the p-type semiconductor layer 17. The active layer 15 is an InGaN layer or InGaN quantum well layers QW1-8 and an In composition of the InGaN superlattice layers SS1-4 is larger than an In composition of the active layer. |
