| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device designed such that the surface area of a floating gate can be increased and the coupling ratio of a nonvolatile memory cell can be improved without relying on the width of an active area, and to provide a manufacturing method therefor.SOLUTION: In a semiconductor device 1 selectively having nonvolatile memory cells 20 on a semiconductor substrate 2, a trench 10 formed on the semiconductor substrate 2 has a projection part 13 projecting upward beyond the surface of the semiconductor substrate 2. A memory cell area 3 of the semiconductor substrate 2 has: an element separation part 5 sectioning an active area 6; and a floating gate 26 arranged in the active area 6 and selectively having portions 26a overlapping the element separation part 5. The floating gate 26 is formed in a dented shape with respect to the overlapping portions 26a. |
