发明名称 SEMICONDUCTOR SUBSTRATE, PROCESS OF MANUFACTURING THE SAME, AND SETTING METHOD OF EXPOSURE CONDITION
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a process of manufacturing the same, capable of reducing cost when setting an optimum exposure condition for a semiconductor substrate of low reflectance such as GaN.SOLUTION: The semiconductor substrate having a reflectance lower than a reflectance of a silicon substrate for light of a specific wavelength includes; a silicon substrate 20; and a dielectric film 10 which is formed on the silicon substrate, and whose refractive index for light of a wavelength of 405 nm is 2.75 or higher and 3.20 or lower. The dielectric film 10 is deposited on the Si substrate 20 by using ECR sputter, for instance.
申请公布号 JP2014183288(A) 申请公布日期 2014.09.29
申请号 JP20130058433 申请日期 2013.03.21
申请人 TOYODA GOSEI CO LTD 发明人 SONOYAMA TAKAHIRO;KIMURA YU
分类号 H01L21/027 主分类号 H01L21/027
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