| 摘要 |
PROBLEM TO BE SOLVED: To provide low-resistance graphene wiring which can be used as wiring of a semiconductor element and prevents the graphene wiring from becoming a semiconductor and dispersing.SOLUTION: Graphene wiring 10 connected to a contact plug 2 formed in a conductive film 1 and a contact layer insulating film 3 is formed. The graphene wiring is formed of a catalyst foundation layer 11, a catalyst layer 12, and a graphene layer 13. The graphene layer is formed of a multi-layer graphene sheet formed of a single layer or 100 or less layers. The graphene layer comprises a dopant layer 14 on a side surface, and atoms or molecules exist between layers or on the layers of the graphene layer. |
