LOW-CARBON GROUP III NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride (III-nitride) crystal which has UV-ray (UV) transmissivity sufficient for use in UV electronic devices and a low carbon and/or silicon concentration and a method and an apparatus for its production.SOLUTION: A III-nitride crystal practically has formula In(w)Al(x)Ga(y)C(a)N(z), where 1-x-w≠y, w-z-y≠0, w+x+y-z≠0, (2≥w≥0), 2≥x≥0), (2≥y≥0), (2≥z≥0) and (a≤2×10yatoms/cm)), is non-stoichiometric and has a carbon and/or silicon concentration of lower than 2×10yatoms/cmand sufficiently UV-transmissive at wavelengths shorter than 300 nm and a size larger than 1 mm. The internal components of a high-temperature HVPE (HT-HVPE) reactor 40 for growth of the III-nitride crystal 411 are preferably composed of a polycrystalline AIN, instead of carbon.