发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
摘要 The present invention forms a thin film having low permittivity and high etching resistance. A method for manufacturing a semiconductor device comprises: forming a thin film on a substrate; removing first impurities containing water and chlorine from the thin film by heat-treating the thin film at a first temperature higher than the temperature of the thin film in the process of forming the thin film; and removing second impurities containing hydrocarbon compounds from the thin film heat-treated at the first temperature by heat-treating the thin film at a second temperature higher than the first temperature.
申请公布号 KR20140114776(A) 申请公布日期 2014.09.29
申请号 KR20140030754 申请日期 2014.03.17
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 SHIMAMOTO SATOSHI;NODA TAKAAKI;HANASHIMA TAKEO;HIROSE YOSHIRO;ASHIHARA HIROSHI;KAMAKURA TSUKASA;NOHARA SHINGO
分类号 H01L21/20;H01L21/324 主分类号 H01L21/20
代理机构 代理人
主权项
地址