发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM |
摘要 |
The present invention forms a thin film having low permittivity and high etching resistance. A method for manufacturing a semiconductor device comprises: forming a thin film on a substrate; removing first impurities containing water and chlorine from the thin film by heat-treating the thin film at a first temperature higher than the temperature of the thin film in the process of forming the thin film; and removing second impurities containing hydrocarbon compounds from the thin film heat-treated at the first temperature by heat-treating the thin film at a second temperature higher than the first temperature. |
申请公布号 |
KR20140114776(A) |
申请公布日期 |
2014.09.29 |
申请号 |
KR20140030754 |
申请日期 |
2014.03.17 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SHIMAMOTO SATOSHI;NODA TAKAAKI;HANASHIMA TAKEO;HIROSE YOSHIRO;ASHIHARA HIROSHI;KAMAKURA TSUKASA;NOHARA SHINGO |
分类号 |
H01L21/20;H01L21/324 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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