| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a quantum dot array device that is able to control the size and position of a formed Si quantum dot.SOLUTION: A method of the invention lets a Si quantum dot 5 grow using a Si cluster 4 as a growth nucleus by performing heat treatment of a lamination structure formed by alternately growing a first layer 2 made up of a composition SiA with a stoichiometric ratio and a second layer 3 that is made up of a composition SiA(x<1) with Si richer than the stoichiometric ratio and includes, at inside, the Si cluster 4 position controlled in an in-plane direction on a substrate 1 such that the Si cluster 4 overlaps with others in a lamination direction when they are projected. |
