发明名称 |
METHOD OF PRODUCTION OF DIELECTRIC LAYER OF MIS STRUCTURES HAVING EFFECT OF CONDUCTIVITY SWITCHING |
摘要 |
FIELD: nanotechnology.SUBSTANCE: invention relates to the field of micro-and nanoelectronics. The method of manufacturing a dielectric layer of MIS structures having the effect of switching is application of the nanocomposite film of silicon oxynitride with the incorporated silicon clusters. Application is carried out by the method of plasma sputtering of the silicon target at a deposition rate of 5-7 nm/min in argon medium with additives of 3-5 vol% oxygen and 6-8 vol% nitrogen.EFFECT: obtaining dielectric layers having the effect of conductivity switching, fully compatible with the materials, as well as with most technological influences used in traditional silicon technology of integrated circuits.2 cl, 3 dwg |
申请公布号 |
RU2529442(C2) |
申请公布日期 |
2014.09.27 |
申请号 |
RU20120129255 |
申请日期 |
2012.07.10 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE UCHREZHDENIE NAUKI FIZIKO-TEKHNOLOGICHESKIJ INSTITUT ROSSIJSKOJ AKADEMII NAUK |
发明人 |
BERDNIKOV ARKADIJ EVGEN'EVICH;GERASHCHENKO VIKTOR NIKOLAEVICH;GUSEV VALERIJ NIKOLAEVICH;MIRONENKO ALEKSANDR ALEKSANDROVICH;ORLIKOVSKIJ ALEKSANDR ALEKSANDROVICH;POPOV ALEKSANDR AFANAS'EVICH;RUDYJ ALEKSANDR STEPANOVICH |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|