发明名称 ION IMPLANTATION APPARATUS AND FILM FORMATION APPARATUS
摘要 <p>Provided is an ion implantation apparatus which is able to improve productivity by increasing throughput. The ion implantation apparatus (1) comprises vacuum chambers (12-18) aligned in order; a return unit (22) arranged in the vacuum chambers (12-18), while returning an object to be returned which comprising a substrate in the direction of the vacuum chambers (12-18) aligned; an ion source (20) installed on the vacuum chamber (16) while irradiating an ion beam toward the substrate; an unloading unit (24) installed on a vacuum chamber (12); and a loading unit (36) installed on a vacuum chamber (18). The unloading unit (24) unloads one tray among a loaded body (S1) in which multiple trays (201-203) are loaded, and returns the tray to the vacuum chamber (16) by the returning unit (22). The loading unit (26) loads a tray returned from the vacuum chamber (16) several times to form a new loaded body (S2).</p>
申请公布号 KR20140114281(A) 申请公布日期 2014.09.26
申请号 KR20140001834 申请日期 2014.01.07
申请人 SUMITOMO HEAVY INDUSTRIES, LTD. 发明人 MITSUMINE YUUKI;MURAKAMI YOSHINOBU
分类号 H01J37/317 主分类号 H01J37/317
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