| 摘要 |
PROBLEM TO BE SOLVED: To specify the wavelength used for analysis of etching processing from among numerous wavelengths constituting light emission data of plasma regarding an etching device in which a wafer is processed by plasma.SOLUTION: In an etching device, during etching processing, light emission intensity in the vicinity of a plurality of wavelengths to be emitted by the designated element is calculated from information indicating light emission measured by a spectrometer, and when it is determined that information on the calculated light emission intensity, and information on the light emission intensity stored in a memory part are similar to each other, the wavelength corresponding to the calculated light emission intensity is extracted in association with the element. |
