| 摘要 |
PROBLEM TO BE SOLVED: To broaden an RBSOA (Reverse Bias Safe Operating Area) by increasing the latch-up resistance of an element, and to reduce an on-voltage.SOLUTION: A p-type base layer 4 is provided on an upper surface side of a semiconductor substrate 1. An n-type emitter region 5 is provided in a protrusion 2 of the semiconductor substrate 1. A p-type contact region 6 is provided in a recess 3 of the semiconductor substrate 1. A gate electrode 9 is provided in a gate trench 7 penetrating the n-type emitter region 5 and the p-type base layer 4. A dummy gate electrode 11 is provided in a dummy trench 8 penetrating the p-type contact region 6 and the p-type base layer 4. An emitter electrode 14 is connected to the n-type emitter region 5 and the p-type contact region 6. A p-type collector layer 15 and a collector electrode 16 are provided on a lower surface side of the semiconductor substrate 1. The gate trench 7 and the dummy trench 8 have a same length in a depth direction, and a lower end of the dummy trench 8 is lower than a lower end of the gate trench 7. |
