| 发明名称 |
INTEGRATED CIRCUITS HAVING CASCODE TRANSISTOR |
| 摘要 |
An integrated circuit includes a first circuit. The first circuit includes a first transistor having a first dopant type. The first circuit further includes a first cascode transistor having the first dopant type, wherein the first cascode transistor connected in series with the first transistor. The first circuit further includes a second transistor having a second dopant type opposite to the first dopant type, wherein the second transistor is connected in series with the first transistor. The first circuit includes a second cascode transistor having the second dopant type, wherein the second cascode transistor is connected in series with the second transistor. The integrated circuit further includes a first bias circuit configured to adjust a threshold voltage of at least one of the first cascode transistor or the second cascode transistor. |
| 申请公布号 |
US2014285255(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201414301409 |
申请日期 |
2014.06.11 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN Yvonne |
| 分类号 |
G05F3/24 |
主分类号 |
G05F3/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit comprising:
a first circuit, the first circuit comprising: a first transistor having a first dopant type; a first cascode transistor having the first dopant type, wherein the first cascode transistor connected in series with the first transistor; a second transistor having a second dopant type opposite to the first dopant type, wherein the second transistor is connected in series with the first transistor; and a second cascode transistor having the second dopant type, wherein the second cascode transistor is connected in series with the second transistor;a first bias circuit configured to adjust a threshold voltage of at least one of the first cascode transistor or the second cascode transistor. |
| 地址 |
Hsinchu TW |
