发明名称 Thermal Air Flow Sensor
摘要 A thermal air flow sensor that produces less measurement error is provided. The thermal air flow sensor includes: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate. The heating resistor and the resistance temperature detectors are formed on the diaphragm portion. The thermal air flow sensor further includes a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors. The silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors. The silicon nitride film has a multilayer structure.
申请公布号 US2014284753(A1) 申请公布日期 2014.09.25
申请号 US201114355104 申请日期 2011.11.28
申请人 Ishitsuka Norio;Hanzawa Keiji;Onose Yasuo;Sakuma Noriyuki 发明人 Ishitsuka Norio;Hanzawa Keiji;Onose Yasuo;Sakuma Noriyuki
分类号 G01F1/69 主分类号 G01F1/69
代理机构 代理人
主权项 1. A thermal air flow sensor comprising: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate, the heating resistor and the resistance temperature detectors being formed on the diaphragm portion, and the thermal air flow sensor further comprising a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors, wherein the silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors, and wherein the silicon nitride film has a multilayer structure.
地址 Tokyo JP