PLASMA CLEANING APPARATUS AND METHOD

摘要

Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. Periodically, a PVD chamber may need to be cleaned to remove material that has built up in undesired locations within the chamber. Additionally, the sputtering target may need to be replaced. By removing the sputtering target and placing a grounded chamber lid in its place, the chamber may be plasma cleaned. The susceptor within the chamber may be electrically biased with an RF current. A stationary magnet assembly may be substantially centered behind the grounded lid to focus the cleaning plasma on the susceptor. Following the plasma cleaning, the magnet and lid may be removed and the sputtering target may be coupled to the chamber to continue processing.

主权项

1. A method for cleaning a processing chamber, comprising:
removing a sputtering target from the processing chamber; sealing the processing chamber; introducing a gas into the processing chamber; applying an RF bias to a pedestal within the processing chamber; maintaining the pedestal at a substantially constant temperature; and removing material from the pedestal to clean the pedestal.