SEMICONDUCTOR DEVICE AND STRAIN MONITOR

摘要

According to one embodiment, a semiconductor device includes a substrate, a semiconductor substrate, an insulating gate field-effect transistor, and a strain gauge unit. The semiconductor substrate is placed on the substrate and has first and second regions. The insulating gate field-effect transistor is provided in the first region of the semiconductor substrate. The strain gauge unit has a long metal resistor, a first insulating film and a second insulating film. The long metal resistor is provided inside of an upper surface of the semiconductor substrate in the second region of the semiconductor substrate. The first insulating film is provided between the semiconductor substrate and the metal resistor and extends up to the upper surface of the semiconductor substrate. The second insulating film is provided above the first insulating film across the metal resistor.

主权项

1. A semiconductor device, comprising:
a substrate; a semiconductor substrate placed on the substrate and having first and second regions; an insulating gate field-effect transistor provided in the first region of the semiconductor substrate; and a strain gauge unit having a long metal resistor provided inside of an upper surface of the semiconductor substrate in the second region of the semiconductor substrate, a first insulating film provided between the semiconductor substrate and the metal resistor and extending up to the upper surface of the semiconductor substrate, and a second insulating film provided above the first insulating film across the metal resistor.