IMAGE SENSORS INCLUDING A GATE ELECTRODE SURROUNDING A FLOATING DIFFUSION REGION

摘要

Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.

主权项

1. An image sensor comprising:
a charge storage layer configured to store charges generated in response to incident light; an electric potential barrier layer on the charge storage layer, the electric potential barrier layer having a different conductivity type from the charge storage layer; a charge detecting layer in the electric potential barrier layer, the charge detecting layer having a different conductivity type from the electric potential barrier layer and being vertically spaced apart from the charge storage layer; and a gate electrode having a closed-loop shape that surrounds the charge detecting layer, wherein the gate electrode is configured to control a potential of the electric potential barrier layer to transmit charges in the charge storage layer to the charge detecting layer.