SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a semiconductor device includes a first and second electrode, a first, second, third and fourth semiconductor region, and a first intermediate metal film. The first region is provided above the first electrode and has a first impurity concentration. The second region is provided above the first region and has a second impurity concentration lower than the first impurity concentration. The third region is provided above the second region and has a third impurity concentration. The fourth region is provided above the second region and has a fourth impurity concentration lower than the third impurity concentration. The second electrode is provided above the third region and the fourth region and is in ohmic contact with the third region. The intermediate metal film is provided between the second electrode and the fourth region. The intermediate metal film forms Schottky junction with the fourth region.

主权项

1. A semiconductor device comprising:
a first electrode; a first semiconductor region of a first conductivity type provided above the first electrode and having a first impurity concentration; a second semiconductor region of the first conductivity type provided above the first semiconductor region, the second semiconductor region having a second impurity concentration lower than the first impurity concentration; a third semiconductor region of a second conductivity type provided above the second semiconductor region, the third semiconductor region having a third impurity concentration; a fourth semiconductor region of the second conductivity type provided above the second semiconductor region, the fourth semiconductor region having a fourth impurity concentration lower than the third impurity concentration; a second electrode provided above the third semiconductor region and the fourth semiconductor region, the second electrode being in ohmic contact with the third semiconductor region; and a first intermediate metal film provided between the second electrode and the fourth semiconductor region, the first intermediate metal film forming Schottky junction with the fourth semiconductor region.